AT395144B - Hochtemperatur-hochdruck-verfahren zur herstellung eines gesinterten kompaktkoerpers aus kubischem bornitrid - Google Patents
Hochtemperatur-hochdruck-verfahren zur herstellung eines gesinterten kompaktkoerpers aus kubischem bornitrid Download PDFInfo
- Publication number
- AT395144B AT395144B AT0477478A AT477478A AT395144B AT 395144 B AT395144 B AT 395144B AT 0477478 A AT0477478 A AT 0477478A AT 477478 A AT477478 A AT 477478A AT 395144 B AT395144 B AT 395144B
- Authority
- AT
- Austria
- Prior art keywords
- pbn
- bomitride
- compact
- cbn
- conversion
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title description 13
- 238000006243 chemical reaction Methods 0.000 claims description 115
- 238000000034 method Methods 0.000 claims description 45
- 230000008569 process Effects 0.000 claims description 28
- 239000007858 starting material Substances 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 19
- 238000010438 heat treatment Methods 0.000 claims description 17
- 238000010899 nucleation Methods 0.000 claims description 13
- 238000011109 contamination Methods 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 230000006911 nucleation Effects 0.000 claims description 11
- 238000010587 phase diagram Methods 0.000 claims description 7
- 239000011149 active material Substances 0.000 claims description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 100
- 239000010410 layer Substances 0.000 description 42
- 239000000843 powder Substances 0.000 description 37
- 239000013078 crystal Substances 0.000 description 36
- 238000012360 testing method Methods 0.000 description 35
- 239000000463 material Substances 0.000 description 30
- 239000002131 composite material Substances 0.000 description 26
- 238000005520 cutting process Methods 0.000 description 22
- 238000002441 X-ray diffraction Methods 0.000 description 19
- 239000002245 particle Substances 0.000 description 18
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 15
- 230000001681 protective effect Effects 0.000 description 12
- 239000010432 diamond Substances 0.000 description 11
- 238000007789 sealing Methods 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 10
- 229910052799 carbon Inorganic materials 0.000 description 10
- 238000005245 sintering Methods 0.000 description 10
- 229910003460 diamond Inorganic materials 0.000 description 9
- 238000001953 recrystallisation Methods 0.000 description 9
- 239000011230 binding agent Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 238000002474 experimental method Methods 0.000 description 7
- 238000000227 grinding Methods 0.000 description 7
- 230000002829 reductive effect Effects 0.000 description 7
- 125000004429 atom Chemical group 0.000 description 6
- 239000003054 catalyst Substances 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- 229910002804 graphite Inorganic materials 0.000 description 6
- 239000010439 graphite Substances 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 238000003786 synthesis reaction Methods 0.000 description 5
- 229910052715 tantalum Inorganic materials 0.000 description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 5
- 230000009466 transformation Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910052582 BN Inorganic materials 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 125000004433 nitrogen atom Chemical group N* 0.000 description 4
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 3
- 238000005299 abrasion Methods 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000003197 catalytic effect Effects 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 229910001026 inconel Inorganic materials 0.000 description 3
- 244000239634 longleaf box Species 0.000 description 3
- 230000036961 partial effect Effects 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 229910052903 pyrophyllite Inorganic materials 0.000 description 3
- 230000000717 retained effect Effects 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 238000007514 turning Methods 0.000 description 3
- 229910052984 zinc sulfide Inorganic materials 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000007542 hardness measurement Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000002296 pyrolytic carbon Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical group [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- KEQXNNJHMWSZHK-UHFFFAOYSA-L 1,3,2,4$l^{2}-dioxathiaplumbetane 2,2-dioxide Chemical compound [Pb+2].[O-]S([O-])(=O)=O KEQXNNJHMWSZHK-UHFFFAOYSA-L 0.000 description 1
- 101150004974 ACP3 gene Proteins 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229920001875 Ebonite Polymers 0.000 description 1
- 229910000760 Hardened steel Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000006124 Pilkington process Methods 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 241001197925 Theila Species 0.000 description 1
- 229910001315 Tool steel Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 244000309464 bull Species 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 229910052809 inorganic oxide Inorganic materials 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008521 reorganization Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000005476 size effect Effects 0.000 description 1
- 239000000344 soap Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 239000002470 thermal conductor Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
- B01J3/062—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies characterised by the composition of the materials to be processed
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/583—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on boron nitride
- C04B35/5831—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on boron nitride based on cubic boron nitrides or Wurtzitic boron nitrides, including crystal structure transformation of powder
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/0605—Composition of the material to be processed
- B01J2203/0645—Boronitrides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/065—Composition of the material produced
- B01J2203/066—Boronitrides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/0675—Structural or physico-chemical features of the materials processed
- B01J2203/068—Crystal growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Products (AREA)
- Compositions Of Oxide Ceramics (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/812,283 US4188194A (en) | 1976-10-29 | 1977-07-01 | Direct conversion process for making cubic boron nitride from pyrolytic boron nitride |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| ATA477478A ATA477478A (de) | 1992-02-15 |
| AT395144B true AT395144B (de) | 1992-09-25 |
Family
ID=25209106
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT0477478A AT395144B (de) | 1977-07-01 | 1978-06-30 | Hochtemperatur-hochdruck-verfahren zur herstellung eines gesinterten kompaktkoerpers aus kubischem bornitrid |
Country Status (20)
| Country | Link |
|---|---|
| JP (1) | JPS5433510A (en]) |
| AT (1) | AT395144B (en]) |
| AU (1) | AU524584B2 (en]) |
| BE (1) | BE868653A (en]) |
| BR (1) | BR7804310A (en]) |
| CH (1) | CH644091A5 (en]) |
| DE (1) | DE2828742A1 (en]) |
| DK (1) | DK298578A (en]) |
| ES (1) | ES471333A1 (en]) |
| FR (1) | FR2395948A1 (en]) |
| GB (1) | GB2002333B (en]) |
| IE (1) | IE47548B1 (en]) |
| IL (1) | IL54939A0 (en]) |
| IN (1) | IN150013B (en]) |
| IT (1) | IT1096850B (en]) |
| MX (1) | MX149093A (en]) |
| NL (1) | NL186506C (en]) |
| NO (1) | NO153603C (en]) |
| SE (1) | SE447241B (en]) |
| ZA (1) | ZA783449B (en]) |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4289503A (en) * | 1979-06-11 | 1981-09-15 | General Electric Company | Polycrystalline cubic boron nitride abrasive and process for preparing same in the absence of catalyst |
| DE3125484A1 (de) * | 1981-06-29 | 1983-03-17 | Belorusskij politechničeskij institut, Minsk | Verfahren zur herstellung von polykristallen eines aus dichten modifikationen bestehenden bornitrides |
| DE3229846C2 (de) * | 1982-08-11 | 1984-05-24 | Dr. Johannes Heidenhain Gmbh, 8225 Traunreut | Längen- oder Winkelmeßeinrichtung |
| EP0194358B1 (en) * | 1985-01-11 | 1991-10-23 | Sumitomo Electric Industries, Ltd. | Heat sink using a sintered body having high heat-conductivity and method of manufacturing thereof |
| EP0221531A3 (en) * | 1985-11-06 | 1992-02-19 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | High heat conductive insulated substrate and method of manufacturing the same |
| JPS62108715A (ja) * | 1985-11-07 | 1987-05-20 | Denki Kagaku Kogyo Kk | 立方晶窒化ほう素の製造方法 |
| JPS62108713A (ja) * | 1985-11-07 | 1987-05-20 | Denki Kagaku Kogyo Kk | 立方晶窒化ほう素の製造方法 |
| JPS62108717A (ja) * | 1985-11-07 | 1987-05-20 | Denki Kagaku Kogyo Kk | 立方晶窒化ほう素の製造方法 |
| JPS62108711A (ja) * | 1985-11-07 | 1987-05-20 | Denki Kagaku Kogyo Kk | 立方晶窒化ほう素の製造方法 |
| JPS62108714A (ja) * | 1985-11-07 | 1987-05-20 | Denki Kagaku Kogyo Kk | 立方晶窒化ほう素の製造方法 |
| JPS62108716A (ja) * | 1985-11-07 | 1987-05-20 | Denki Kagaku Kogyo Kk | 立方晶窒化ほう素の製造方法 |
| DE3774744D1 (de) * | 1986-04-09 | 1992-01-09 | Sumitomo Electric Industries | Verfahren zur herstellung von kompakten sinterkoerpern aus kubischem bornitrid. |
| JPH0339795U (en]) * | 1989-04-19 | 1991-04-17 | ||
| US5015265A (en) * | 1989-06-14 | 1991-05-14 | General Electric Company | Process for making cubic boron nitride from coated hexagonal boron nitride, and abrasive particles and articles made therefrom |
| DE4204009C2 (de) * | 1992-02-12 | 1994-09-15 | Goelz Siegfried Fa | Verfahren zur Herstellung von amorphem ultrahartem Bornitrid und nach dem Verfahren hergestelltes Bornitrid |
| JPH07104739A (ja) * | 1993-10-01 | 1995-04-21 | Maruyasu Kanagata:Kk | 大正琴 |
| JPH10158065A (ja) * | 1996-11-28 | 1998-06-16 | Sumitomo Electric Ind Ltd | 立方晶窒化ホウ素焼結体およびその製造方法 |
| CA2711146A1 (en) * | 2007-12-31 | 2009-07-09 | Rafael Nathan Kleiman | High efficiency silicon-based solar cells |
| US20090169781A1 (en) * | 2007-12-31 | 2009-07-02 | Marc Schaepkens | Low thermal conductivity low density pyrolytic boron nitride material, method of making, and articles made therefrom |
| EP2752398B1 (en) | 2011-08-30 | 2019-02-06 | Sumitomo Electric Industries, Ltd. | Cubic boron nitride complex polycrystalline substance, method for manufacturing same, cutting tool, wire-drawing die, and grinding tool |
| JP6159064B2 (ja) * | 2012-08-08 | 2017-07-05 | 住友電気工業株式会社 | 立方晶窒化ホウ素複合多結晶体及び切削工具、線引きダイス、ならびに研削工具 |
| JP5929655B2 (ja) * | 2012-09-11 | 2016-06-08 | 住友電気工業株式会社 | 立方晶窒化ホウ素複合多結晶体およびその製造方法、切削工具、ならびに耐摩工具 |
| JP6291995B2 (ja) | 2014-04-18 | 2018-03-14 | 住友電気工業株式会社 | 立方晶窒化ホウ素多結晶体、切削工具、耐摩工具、研削工具、および立方晶窒化ホウ素多結晶体の製造方法 |
| JP6447197B2 (ja) | 2015-02-04 | 2019-01-09 | 住友電気工業株式会社 | 立方晶窒化ホウ素多結晶体、切削工具、耐摩工具、研削工具、および立方晶窒化ホウ素多結晶体の製造方法 |
| JP6447205B2 (ja) | 2015-02-09 | 2019-01-09 | 住友電気工業株式会社 | 立方晶窒化ホウ素多結晶体、切削工具、耐摩工具、研削工具、および立方晶窒化ホウ素多結晶体の製造方法 |
| US11066334B2 (en) | 2016-06-29 | 2021-07-20 | Schlumberger Technology Corporation | Binderless cBN sintering with cubic press |
| EP3333141B1 (en) | 2016-10-06 | 2021-12-15 | Sumitomo Electric Industries, Ltd. | Method for producing boron nitride polycrystal, boron nitride polycrystal, cutting tool, wear-resistant tool, and grinding tool |
| WO2019244894A1 (ja) * | 2018-06-18 | 2019-12-26 | 住友電工ハードメタル株式会社 | 立方晶窒化硼素多結晶体及びその製造方法 |
| JP7076531B2 (ja) * | 2018-09-27 | 2022-05-27 | 住友電工ハードメタル株式会社 | 立方晶窒化硼素多結晶体 |
| WO2020174922A1 (ja) * | 2019-02-28 | 2020-09-03 | 住友電工ハードメタル株式会社 | 立方晶窒化硼素多結晶体及びその製造方法 |
| WO2020174923A1 (ja) * | 2019-02-28 | 2020-09-03 | 住友電工ハードメタル株式会社 | 立方晶窒化硼素多結晶体及びその製造方法 |
| WO2020175647A1 (ja) * | 2019-02-28 | 2020-09-03 | 住友電工ハードメタル株式会社 | 立方晶窒化硼素多結晶体及びその製造方法 |
| JP7319482B2 (ja) * | 2021-08-26 | 2023-08-01 | デンカ株式会社 | セラミックス板の製造方法、セラミックス板、複合シート、及び積層基板 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3578403A (en) * | 1968-07-05 | 1971-05-11 | Union Carbide Corp | Recrystallization of pyrolytic boron nitride |
| DE2111180C3 (de) * | 1971-03-09 | 1973-10-11 | Institut Fisiki Twojordowo Tela I Poluprowodnikow Akademii Nauk Belorusskoj Ssr, Minsk (Sowjetunion) | Verfahren zur Herstellung von kubi schem Bornitrid |
| ZA724056B (en) * | 1971-07-01 | 1973-03-28 | Gen Electric | Catalyst systems for synthesis of cubic boron nitride |
| JPS5238049B2 (en]) * | 1972-02-04 | 1977-09-27 | ||
| JPS5647124B2 (en]) * | 1973-06-26 | 1981-11-07 | ||
| IE39632B1 (en) * | 1973-09-06 | 1978-11-22 | Gen Electric | Production of high-density boron nitride |
| JPS5760676B2 (en]) * | 1973-09-28 | 1982-12-21 | Tokyo Shibaura Electric Co | |
| JPS5061413A (en]) * | 1973-10-01 | 1975-05-27 | ||
| JPS5750677Y2 (en]) * | 1973-12-05 | 1982-11-05 | ||
| JPS5116196A (ja) * | 1974-07-29 | 1976-02-09 | Hitachi Ltd | Kokanyorotsukakuketsusokusochi |
-
1978
- 1978-06-14 IN IN657/CAL/78A patent/IN150013B/en unknown
- 1978-06-15 ZA ZA783449A patent/ZA783449B/xx unknown
- 1978-06-16 IL IL7854939A patent/IL54939A0/xx not_active IP Right Cessation
- 1978-06-29 GB GB7828248A patent/GB2002333B/en not_active Expired
- 1978-06-29 AU AU37619/78A patent/AU524584B2/en not_active Expired
- 1978-06-30 IE IE1320/78A patent/IE47548B1/en not_active IP Right Cessation
- 1978-06-30 DK DK298578A patent/DK298578A/da not_active Application Discontinuation
- 1978-06-30 NO NO782272A patent/NO153603C/no unknown
- 1978-06-30 IT IT25186/78A patent/IT1096850B/it active
- 1978-06-30 BE BE189003A patent/BE868653A/xx not_active IP Right Cessation
- 1978-06-30 JP JP7877378A patent/JPS5433510A/ja active Granted
- 1978-06-30 SE SE7807437A patent/SE447241B/sv not_active IP Right Cessation
- 1978-06-30 MX MX174019A patent/MX149093A/es unknown
- 1978-06-30 AT AT0477478A patent/AT395144B/de not_active IP Right Cessation
- 1978-06-30 CH CH719678A patent/CH644091A5/de not_active IP Right Cessation
- 1978-06-30 BR BR7804310A patent/BR7804310A/pt unknown
- 1978-06-30 DE DE19782828742 patent/DE2828742A1/de active Granted
- 1978-06-30 FR FR7819597A patent/FR2395948A1/fr active Granted
- 1978-06-30 ES ES471333A patent/ES471333A1/es not_active Expired
- 1978-07-03 NL NLAANVRAGE7807196,A patent/NL186506C/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| NO153603C (no) | 1986-04-23 |
| JPS5433510A (en) | 1979-03-12 |
| DE2828742C2 (en]) | 1989-02-02 |
| NL186506C (nl) | 1990-12-17 |
| DE2828742A1 (de) | 1979-03-01 |
| ZA783449B (en) | 1980-04-30 |
| ES471333A1 (es) | 1979-10-01 |
| NO782272L (no) | 1979-01-03 |
| CH644091A5 (de) | 1984-07-13 |
| NL7807196A (nl) | 1979-01-03 |
| MX149093A (es) | 1983-08-24 |
| FR2395948B1 (en]) | 1984-03-23 |
| AU524584B2 (en) | 1982-09-23 |
| NO153603B (no) | 1986-01-13 |
| IN150013B (en]) | 1982-06-26 |
| BE868653A (fr) | 1978-10-16 |
| IE781320L (en) | 1979-01-01 |
| JPS63394B2 (en]) | 1988-01-06 |
| NL186506B (nl) | 1990-07-16 |
| SE447241B (sv) | 1986-11-03 |
| GB2002333A (en) | 1979-02-21 |
| IL54939A0 (en) | 1978-08-31 |
| IT7825186A0 (it) | 1978-06-30 |
| ATA477478A (de) | 1992-02-15 |
| GB2002333B (en) | 1982-05-26 |
| IT1096850B (it) | 1985-08-26 |
| DK298578A (da) | 1979-01-02 |
| BR7804310A (pt) | 1979-04-17 |
| FR2395948A1 (fr) | 1979-01-26 |
| AU3761978A (en) | 1980-01-03 |
| IE47548B1 (en) | 1984-04-18 |
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